IXTP260N055T2 IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO220AB; 60ns
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Power dissipation: 480W
Polarisation: unipolar
Gate charge: 0.14µC
Kind of channel: enhanced
Reverse recovery time: 60ns
Drain-source voltage: 55V
Drain current: 260A
On-state resistance: 3.3mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 6.95 EUR |
| 12+ | 6.26 EUR |
| 14+ | 5.13 EUR |
| 15+ | 4.85 EUR |
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Technische Details IXTP260N055T2 IXYS
Description: MOSFET N-CH 55V 260A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 260A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V.
Weitere Produktangebote IXTP260N055T2 nach Preis ab 4.85 EUR bis 14.69 EUR
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IXTP260N055T2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO220AB; 60ns Case: TO220AB Mounting: THT Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Type of transistor: N-MOSFET Power dissipation: 480W Polarisation: unipolar Gate charge: 0.14µC Kind of channel: enhanced Reverse recovery time: 60ns Drain-source voltage: 55V Drain current: 260A On-state resistance: 3.3mΩ |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP260N055T2 | Hersteller : IXYS |
Description: MOSFET N-CH 55V 260A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V |
auf Bestellung 1123 Stücke: Lieferzeit 10-14 Tag (e) |
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