IXTP260N055T2 IXYS
Hersteller: IXYS
Description: MOSFET N-CH 55V 260A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.04 EUR |
| 10+ | 10.95 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2 Stücke
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Technische Details IXTP260N055T2 IXYS
Description: MOSFET N-CH 55V 260A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 260A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V.
Weitere Produktangebote IXTP260N055T2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IXTP260N055T2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO220AB; 60ns Power dissipation: 480W Gate charge: 0.14µC Polarisation: unipolar Features of semiconductor devices: thrench gate power mosfet Drain current: 260A Kind of channel: enhancement Drain-source voltage: 55V Type of transistor: N-MOSFET Kind of package: tube Case: TO220AB On-state resistance: 3.3mΩ Reverse recovery time: 60ns Mounting: THT |
auf Bestellung 308 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXTP260N055T2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO220AB; 60ns
Power dissipation: 480W
Gate charge: 0.14µC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 260A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 3.3mΩ
Reverse recovery time: 60ns
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO220AB; 60ns
Power dissipation: 480W
Gate charge: 0.14µC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 260A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 3.3mΩ
Reverse recovery time: 60ns
Mounting: THT
auf Bestellung 308 Stücke:
Lieferzeit 14-21 Tag (e)