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IXTP260N055T2

IXTP260N055T2 IXYS


pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCAF933DD53820&compId=IXTA(P)260N055T2.pdf?ci_sign=7d74893cde6dc5f8997d0fa7ff9adc13d7fa48f1 Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO220AB; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 8 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
8+8.94 EUR
9+7.95 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXTP260N055T2 IXYS

Description: MOSFET N-CH 55V 260A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 260A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V.

Weitere Produktangebote IXTP260N055T2 nach Preis ab 5.73 EUR bis 10.00 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXTP260N055T2 IXTP260N055T2 Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCAF933DD53820&compId=IXTA(P)260N055T2.pdf?ci_sign=7d74893cde6dc5f8997d0fa7ff9adc13d7fa48f1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO220AB; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.94 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXTP260N055T2 IXTP260N055T2 Hersteller : Littelfuse Inc. Description: MOSFET N-CH 55V 260A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
auf Bestellung 67 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.43 EUR
50+5.73 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXTP260N055T2 IXTP260N055T2 Hersteller : IXYS media-3323566.pdf MOSFETs TRENCHT2 PWR MOSFET 55V 260A
auf Bestellung 21 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.00 EUR
10+8.99 EUR
50+6.07 EUR
100+5.79 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTP260N055T2 IXTP260N055T2 Hersteller : Littelfuse osfets_n-channel_trench_gate_ixt_260n055t2_datasheet.pdf.pdf Trans MOSFET N-CH 55V 260A Automotive
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