IXTP26P20P IXYS
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 0.17Ω
Drain current: -26A
Drain-source voltage: -200V
Gate charge: 56nC
Reverse recovery time: 240ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 300W
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO220AB
Mounting: THT
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Type of transistor: P-MOSFET
On-state resistance: 0.17Ω
Drain current: -26A
Drain-source voltage: -200V
Gate charge: 56nC
Reverse recovery time: 240ns
Technology: PolarP™
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 300W
auf Bestellung 295 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
10+ | 7.78 EUR |
13+ | 5.59 EUR |
14+ | 5.28 EUR |
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Technische Details IXTP26P20P IXYS
Description: MOSFET P-CH 200V 26A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V.
Weitere Produktangebote IXTP26P20P nach Preis ab 5.28 EUR bis 16.43 EUR
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IXTP26P20P | Hersteller : IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO220AB Mounting: THT Case: TO220AB Kind of package: tube Polarisation: unipolar Type of transistor: P-MOSFET On-state resistance: 0.17Ω Drain current: -26A Drain-source voltage: -200V Gate charge: 56nC Reverse recovery time: 240ns Technology: PolarP™ Kind of channel: enhanced Gate-source voltage: ±20V Power dissipation: 300W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 295 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP26P20P | Hersteller : IXYS |
Description: MOSFET P-CH 200V 26A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V |
auf Bestellung 1866 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP26P20P | Hersteller : IXYS | MOSFET -26.0 Amps -200V 0.170 Rds |
auf Bestellung 7856 Stücke: Lieferzeit 14-28 Tag (e) |
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IXTP26P20P | Hersteller : IXYS SEMICONDUCTOR |
Description: IXYS SEMICONDUCTOR - IXTP26P20P - Leistungs-MOSFET, p-Kanal, 200 V, 26 A, 0.17 ohm, TO-220AB, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 200 Dauer-Drainstrom Id: 26 Rds(on)-Messspannung Vgs: 10 Verlustleistung Pd: 300 Bauform - Transistor: TO-220AB Anzahl der Pins: 3 Produktpalette: PolarP Wandlerpolarität: p-Kanal Betriebswiderstand, Rds(on): 0.17 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 4 SVHC: No SVHC (16-Jan-2020) |
auf Bestellung 238 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP26P20P | Hersteller : Littelfuse | Trans MOSFET P-CH 200V 26A 3-Pin(3+Tab) TO-220 |
Produkt ist nicht verfügbar |
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IXTP26P20P | Hersteller : Littelfuse | Trans MOSFET P-CH 200V 26A 3-Pin(3+Tab) TO-220 |
Produkt ist nicht verfügbar |