IXTP26P20P IXYS
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO220AB
Mounting: THT
Kind of package: tube
Drain-source voltage: -200V
Drain current: -26A
Gate charge: 56nC
Reverse recovery time: 240ns
On-state resistance: 0.17Ω
Gate-source voltage: ±20V
Power dissipation: 300W
Polarisation: unipolar
Case: TO220AB
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
| Anzahl | Privatkunde |
|---|---|
| 9+ | 9.98 EUR |
| 11+ | 7.83 EUR |
| 14+ | 6.32 EUR |
| 50+ | 6.05 EUR |
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Technische Details IXTP26P20P IXYS
Description: MOSFET P-CH 200V 26A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V.
Weitere Produktangebote IXTP26P20P nach Preis ab 8.51 EUR bis 17.85 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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IXTP26P20P | IXYS |
MOSFETs -26.0 Amps -200V 0.170 Rds |
auf Bestellung 3130 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP26P20P | IXYS |
Description: MOSFET P-CH 200V 26A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V |
auf Bestellung 249 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IXTP26P20P |
|
Hersteller: IXYS
MOSFETs -26.0 Amps -200V 0.170 Rds
MOSFETs -26.0 Amps -200V 0.170 Rds
auf Bestellung 3130 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 17.55 EUR |
| 10+ | 9.65 EUR |
| 100+ | 8.88 EUR |
| 1000+ | 8.51 EUR |
| IXTP26P20P |
|
Hersteller: IXYS
Description: MOSFET P-CH 200V 26A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
Description: MOSFET P-CH 200V 26A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
auf Bestellung 249 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.85 EUR |
| 50+ | 9.85 EUR |
| 100+ | 9.08 EUR |