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IXTP270N04T4

IXTP270N04T4 IXYS


pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA7081FBA9820&compId=IXTH(P)270N04T4.pdf?ci_sign=33513c4c5bdc13e31fc846194602bf96a0b96b81 Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Reverse recovery time: 48ns
Drain-source voltage: 40V
Drain current: 270A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 182nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Anzahl je Verpackung: 1 Stücke
auf Bestellung 59 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
17+4.33 EUR
19+3.90 EUR
22+3.27 EUR
24+3.09 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXTP270N04T4 IXYS

Description: MOSFET N-CH 40V 270A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 270A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9140 pF @ 25 V.

Weitere Produktangebote IXTP270N04T4 nach Preis ab 3.09 EUR bis 7.00 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXTP270N04T4 IXTP270N04T4 Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA7081FBA9820&compId=IXTH(P)270N04T4.pdf?ci_sign=33513c4c5bdc13e31fc846194602bf96a0b96b81 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Reverse recovery time: 48ns
Drain-source voltage: 40V
Drain current: 270A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 182nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.33 EUR
19+3.90 EUR
22+3.27 EUR
24+3.09 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IXTP270N04T4 IXTP270N04T4 Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_270n04t4_datasheet.pdf.pdf Description: MOSFET N-CH 40V 270A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9140 pF @ 25 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.00 EUR
50+3.92 EUR
100+3.61 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXTP270N04T4 IXTP270N04T4 Hersteller : Littelfuse mosfets_n-channel_trench_gate_ixt_270n04t4_datasheet.pdf.pdf Trans MOSFET N-CH 40V 270A 3-Pin(3+Tab) TO-220
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IXTP270N04T4 IXTP270N04T4 Hersteller : IXYS media-3320195.pdf MOSFET 40V/270A TrenchT4 Power MOSFET
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