IXTP270N04T4 IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Reverse recovery time: 48ns
Drain-source voltage: 40V
Drain current: 270A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 182nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Anzahl je Verpackung: 1 Stücke
auf Bestellung 59 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 17+ | 4.33 EUR |
| 19+ | 3.9 EUR |
| 22+ | 3.27 EUR |
| 24+ | 3.09 EUR |
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Technische Details IXTP270N04T4 IXYS
Description: MOSFET N-CH 40V 270A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 270A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9140 pF @ 25 V.
Weitere Produktangebote IXTP270N04T4 nach Preis ab 3.09 EUR bis 7 EUR
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IXTP270N04T4 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns Reverse recovery time: 48ns Drain-source voltage: 40V Drain current: 270A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 182nC Kind of channel: enhancement Mounting: THT Case: TO220AB |
auf Bestellung 59 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP270N04T4 | Hersteller : IXYS |
Description: MOSFET N-CH 40V 270A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 270A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9140 pF @ 25 V |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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