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Technische Details IXTP2N100 Littelfuse
Description: MOSFET N-CH 1000V 2A TO220AB, Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4.5V @ 250µA.
Weitere Produktangebote IXTP2N100 nach Preis ab 8.25 EUR bis 11.21 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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IXTP2N100 | IXYS |
 Description: MOSFET N-CH 1000V 2A TO220ABPower Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4.5V @ 250µA |
auf Bestellung 1983 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTP2N100 |
|
Hersteller: IXYS
Description: MOSFET N-CH 1000V 2A TO220AB
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Description: MOSFET N-CH 1000V 2A TO220AB
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
auf Bestellung 1983 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.21 EUR |
| 10+ | 10.06 EUR |
| 100+ | 8.25 EUR |