IXTP2N100P Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 1000V 2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 25 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.58 EUR |
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Technische Details IXTP2N100P Littelfuse Inc.
Description: MOSFET N-CH 1000V 2A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V, Power Dissipation (Max): 86W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 100µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 25 V.
Weitere Produktangebote IXTP2N100P nach Preis ab 2.89 EUR bis 5.67 EUR
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IXTP2N100P | Hersteller : IXYS |
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auf Bestellung 123 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP2N100P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO220AB; 800ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2A Power dissipation: 86W Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 800ns Anzahl je Verpackung: 1 Stücke |
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IXTP2N100P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO220AB; 800ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2A Power dissipation: 86W Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 800ns |
Produkt ist nicht verfügbar |