IXTP2N100P Littelfuse Inc.
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 1000V 2A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Technische Details IXTP2N100P Littelfuse Inc.
Description: MOSFET N-CH 1000V 2A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4.5V @ 100µA, Power Dissipation (Max): 86W (Tc), Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote IXTP2N100P nach Preis ab 3.33 EUR bis 8.89 EUR
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IXTP2N100P | IXYS |
MOSFETs 2 Amps 1000V 7.5 Rds |
auf Bestellung 132 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTP2N100P |
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Hersteller: IXYS
MOSFETs 2 Amps 1000V 7.5 Rds
MOSFETs 2 Amps 1000V 7.5 Rds
auf Bestellung 132 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 8.89 EUR |
| 10+ | 5.83 EUR |
| 100+ | 4.33 EUR |
| 500+ | 3.4 EUR |
| 1000+ | 3.33 EUR |