IXTP2N60P Ixys Corporation
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details IXTP2N60P Ixys Corporation
Description: MOSFET N-CH 600V 2A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1A, 10V, Power Dissipation (Max): 55W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V.
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IXTP2N60P | Hersteller : Ixys Corporation |
 Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-220 |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXTP2N60P | Hersteller : IXYS |
MOSFET 2.0 Amps 600 V 4.7 Ohm Rds |
auf Bestellung 108 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP2N60P | Hersteller : IXYS |
Description: MOSFET N-CH 600V 2A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 5.1Ohm @ 1A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V |
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