IXTP2N65X2 IXYS
Hersteller: IXYSDescription: MOSFET N-CH 650V 2A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 1A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
auf Bestellung 67 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.47 EUR |
| 50+ | 3.59 EUR |
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Technische Details IXTP2N65X2 IXYS
Description: MOSFET N-CH 650V 2A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 2.3Ohm @ 1A, 10V, Power Dissipation (Max): 55W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V.
Weitere Produktangebote IXTP2N65X2 nach Preis ab 2.18 EUR bis 4.51 EUR
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auf Bestellung 271 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP2N65X2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Power dissipation: 55W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: THT Gate charge: 4.3nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 137ns Technology: X2-Class Anzahl je Verpackung: 1 Stücke |
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IXTP2N65X2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Power dissipation: 55W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: THT Gate charge: 4.3nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 137ns Technology: X2-Class |
Produkt ist nicht verfügbar |