| Anzahl | Preis |
|---|---|
| 1+ | 3.91 EUR |
| 10+ | 2.6 EUR |
| 500+ | 2.55 EUR |
| 1000+ | 2.5 EUR |
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Technische Details IXTP2N65X2 IXYS
Description: MOSFET N-CH 650V 2A TO220, Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 55W (Tc), Rds On (Max) @ Id, Vgs: 2.3Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote IXTP2N65X2 nach Preis ab 3.59 EUR bis 4.47 EUR
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IXTP2N65X2 | Hersteller : IXYS |
 Description: MOSFET N-CH 650V 2A TO220Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 2.3Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 67 Stücke: Lieferzeit 10-14 Tag (e) |
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