IXTP2R4N120P IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Reverse recovery time: 920ns
Drain-source voltage: 1.2kV
Drain current: 2.4A
On-state resistance: 7.5Ω
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 37nC
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 6A
Mounting: THT
Case: TO220AB
Anzahl je Verpackung: 1 Stücke
auf Bestellung 307 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 8.32 EUR |
| 14+ | 5.32 EUR |
| 15+ | 5.03 EUR |
| 500+ | 4.83 EUR |
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Technische Details IXTP2R4N120P IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W, Reverse recovery time: 920ns, Drain-source voltage: 1.2kV, Drain current: 2.4A, On-state resistance: 7.5Ω, Type of transistor: N-MOSFET, Power dissipation: 125W, Polarisation: unipolar, Kind of package: tube, Features of semiconductor devices: standard power mosfet, Gate charge: 37nC, Technology: Polar™, Kind of channel: enhancement, Gate-source voltage: ±30V, Pulsed drain current: 6A, Mounting: THT, Case: TO220AB, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXTP2R4N120P nach Preis ab 5.03 EUR bis 10.54 EUR
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IXTP2R4N120P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W Reverse recovery time: 920ns Drain-source voltage: 1.2kV Drain current: 2.4A On-state resistance: 7.5Ω Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 37nC Technology: Polar™ Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 6A Mounting: THT Case: TO220AB |
auf Bestellung 307 Stücke: Lieferzeit 14-21 Tag (e) |
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