IXTP2R4N120P IXYS
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220AB
Technology: Polar™
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 2.4A
Gate charge: 37nC
Reverse recovery time: 920ns
On-state resistance: 7.5Ω
Pulsed drain current: 6A
Gate-source voltage: ±30V
Power dissipation: 125W
| Anzahl | Privatkunde |
|---|---|
| 10+ | 8.64 EUR |
| 11+ | 8.08 EUR |
| 50+ | 6.68 EUR |
| 100+ | 5.9 EUR |
| 250+ | 5.75 EUR |
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Technische Details IXTP2R4N120P IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W, Kind of channel: enhancement, Mounting: THT, Type of transistor: N-MOSFET, Case: TO220AB, Technology: Polar™, Features of semiconductor devices: standard power mosfet, Kind of package: tube, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 2.4A, Gate charge: 37nC, Reverse recovery time: 920ns, On-state resistance: 7.5Ω, Pulsed drain current: 6A, Gate-source voltage: ±30V, Power dissipation: 125W.
Weitere Produktangebote IXTP2R4N120P nach Preis ab 7.03 EUR bis 12.54 EUR
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IXTP2R4N120P | IXYS |
MOSFETs 2.4 Amps 1200V 7.5 Rds |
auf Bestellung 294 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTP2R4N120P |
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Hersteller: IXYS
MOSFETs 2.4 Amps 1200V 7.5 Rds
MOSFETs 2.4 Amps 1200V 7.5 Rds
auf Bestellung 294 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.54 EUR |
| 10+ | 10.77 EUR |
| 50+ | 9.73 EUR |
| 100+ | 8.96 EUR |
| 250+ | 8.57 EUR |
| 500+ | 8.07 EUR |
| 1000+ | 7.03 EUR |