Produkte > IXYS > IXTP32P20T
IXTP32P20T

IXTP32P20T IXYS

IXT_32P20T.pdf
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Case: TO220AB
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -32A
Reverse recovery time: 190ns
Gate charge: 185nC
On-state resistance: 0.13Ω
Gate-source voltage: ±15V
Power dissipation: 300W
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.88 EUR
9+8.07 EUR
10+7.16 EUR
50+7.02 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IXTP32P20T IXYS

Description: MOSFET P-CH 200V 32A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V.

Weitere Produktangebote IXTP32P20T nach Preis ab 9 EUR bis 17.72 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXTP32P20T IXTP32P20T Hersteller : IXYS Littelfuse-Discrete-MOSFETs-P-Channel-IXT-32P20T-Datasheet.PDF?assetguid=41EE09BF-5ADB-4340-95F0-9B4C12E513EA Description: MOSFET P-CH 200V 32A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V
auf Bestellung 404 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.41 EUR
50+9.74 EUR
100+9 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXTP32P20T IXTP32P20T Hersteller : IXYS Littelfuse_Discrete_MOSFETs_P_Channel_IXT_32P20T_Datasheet.PDF MOSFETs TenchP Power MOSFET
auf Bestellung 2770 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+17.72 EUR
10+10.28 EUR
100+9.38 EUR
Im Einkaufswagen  Stück im Wert von  UAH