
IXTP3N100D2 IXYS

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 5.5Ω
Mounting: THT
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
auf Bestellung 204 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
15+ | 5.06 EUR |
26+ | 2.76 EUR |
28+ | 2.62 EUR |
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Technische Details IXTP3N100D2 IXYS
Description: MOSFET N-CH 1000V 3A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 5.5Ohm @ 1.5A, 0V, Power Dissipation (Max): 125W (Tc), Supplier Device Package: TO-220-3, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V.
Weitere Produktangebote IXTP3N100D2 nach Preis ab 2.59 EUR bis 7.13 EUR
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IXTP3N100D2 | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 3A Power dissipation: 125W Case: TO220AB On-state resistance: 5.5Ω Mounting: THT Gate charge: 1.02µC Kind of package: tube Kind of channel: depletion Reverse recovery time: 17ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 204 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP3N100D2 | Hersteller : IXYS |
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auf Bestellung 1024 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP3N100D2 | Hersteller : Littelfuse |
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auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP3N100D2 Produktcode: 163724
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IXTP3N100D2 | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXTP3N100D2 | Hersteller : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 5.5Ohm @ 1.5A, 0V Power Dissipation (Max): 125W (Tc) Supplier Device Package: TO-220-3 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V |
Produkt ist nicht verfügbar |