IXTP3N50D2 IXYS
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Reverse recovery time: 24ns
Gate charge: 1.07µC
On-state resistance: 1.5Ω
Drain current: 3A
Power dissipation: 125W
Drain-source voltage: 500V
Polarisation: unipolar
Case: TO220AB
Kind of channel: depletion
| Anzahl | Privatkunde |
|---|---|
| 12+ | 7.41 EUR |
| 14+ | 6.25 EUR |
| 25+ | 5.14 EUR |
| 50+ | 4.26 EUR |
| 100+ | 3.93 EUR |
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Technische Details IXTP3N50D2 IXYS
Description: MOSFET N-CH 500V 3A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V, Power Dissipation (Max): 125W (Tc), Supplier Device Package: TO-220-3, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V.
Weitere Produktangebote IXTP3N50D2 nach Preis ab 5.26 EUR bis 11.85 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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IXTP3N50D2 | IXYS |
Description: MOSFET N-CH 500V 3A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V Power Dissipation (Max): 125W (Tc) Supplier Device Package: TO-220-3 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V |
auf Bestellung 183 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP3N50D2 | IXYS |
MOSFETs N-CH MOSFETS (D2) 500V 3A |
auf Bestellung 792 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTP3N50D2 |
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Hersteller: IXYS
Description: MOSFET N-CH 500V 3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-220-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V
Description: MOSFET N-CH 500V 3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 0V
Power Dissipation (Max): 125W (Tc)
Supplier Device Package: TO-220-3
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 25 V
auf Bestellung 183 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.71 EUR |
| 50+ | 6.2 EUR |
| 100+ | 5.66 EUR |
| IXTP3N50D2 |
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Hersteller: IXYS
MOSFETs N-CH MOSFETS (D2) 500V 3A
MOSFETs N-CH MOSFETS (D2) 500V 3A
auf Bestellung 792 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.85 EUR |
| 10+ | 6.28 EUR |
| 100+ | 5.71 EUR |
| 500+ | 5.62 EUR |
| 1000+ | 5.26 EUR |