Weitere Produktangebote IXTP450P2 nach Preis ab 4.88 EUR bis 12.82 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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IXTP450P2 | Ixys Corporation |
 Trans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 176 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP450P2 | IXYS |
MOSFETs PolarP2 Power MOSFET |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP450P2 | IXYS |
Description: MOSFET N-CH 500V 16A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 8A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IXTP450P2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 300W Case: TO220AB On-state resistance: 0.33Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 43nC Features of semiconductor devices: standard power mosfet Reverse recovery time: 400ns |
auf Bestellung 141 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXTP450P2 |
|
Hersteller: Ixys Corporation
Trans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-220AB
Trans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-220AB
auf Bestellung 176 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 10.2 EUR |
| 50+ | 5.4 EUR |
| 100+ | 4.88 EUR |
| IXTP450P2 |
|
Hersteller: IXYS
MOSFETs PolarP2 Power MOSFET
MOSFETs PolarP2 Power MOSFET
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.82 EUR |
| 10+ | 6.81 EUR |
| 100+ | 6.22 EUR |
| 500+ | 5.38 EUR |
| IXTP450P2 |
|
Hersteller: IXYS
Description: MOSFET N-CH 500V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
Description: MOSFET N-CH 500V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| IXTP450P2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 43nC
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 43nC
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
auf Bestellung 141 Stücke:
Lieferzeit 14-21 Tag (e)