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IXTP450P2

IXTP450P2 IXYS


pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D55001B8D0D820&compId=IXTH(P%2CQ)450P2.pdf?ci_sign=bd2a070be623e6483ee1ebfc57c7e655c7dd0ea6 Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 16A
On-state resistance: 0.33Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 43nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Anzahl je Verpackung: 1 Stücke
auf Bestellung 177 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
13+5.86 EUR
23+3.19 EUR
24+3.02 EUR
100+2.90 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXTP450P2 IXYS

Description: MOSFET N-CH 500V 16A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 330mOhm @ 8A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V.

Weitere Produktangebote IXTP450P2 nach Preis ab 2.90 EUR bis 5.86 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXTP450P2 IXTP450P2 Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D55001B8D0D820&compId=IXTH(P%2CQ)450P2.pdf?ci_sign=bd2a070be623e6483ee1ebfc57c7e655c7dd0ea6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 16A
On-state resistance: 0.33Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 43nC
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
auf Bestellung 177 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.86 EUR
23+3.19 EUR
24+3.02 EUR
100+2.90 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IXTP450P2
Produktcode: 164249
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Transistoren > MOSFET N-CH
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IXTP450P2 IXTP450P2 Hersteller : Littelfuse crete_mosfets_n-channel_standard_ixt_450p2_datasheet.pdf.pdf Trans MOSFET N-CH 500V 16A 3-Pin(3+Tab) TO-220AB
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IXTP450P2 IXTP450P2 Hersteller : IXYS Description: MOSFET N-CH 500V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
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IXTP450P2 IXTP450P2 Hersteller : IXYS media-3321997.pdf MOSFET PolarP2 Power MOSFET
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