IXTP50N25T IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 50A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 166ns
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 354 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 6.48 EUR |
| 17+ | 4.3 EUR |
| 18+ | 4.08 EUR |
| 50+ | 3.9 EUR |
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Technische Details IXTP50N25T IXYS
Description: MOSFET N-CH 250V 50A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 10V, Power Dissipation (Max): 400W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V.
Weitere Produktangebote IXTP50N25T nach Preis ab 3.9 EUR bis 8.59 EUR
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IXTP50N25T | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO220AB; 166ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 50A Power dissipation: 400W Case: TO220AB On-state resistance: 60mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 166ns Features of semiconductor devices: thrench gate power mosfet Anzahl je Verpackung: 1 Stücke |
auf Bestellung 354 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP50N25T | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 250V 50A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V |
auf Bestellung 518 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP50N25T | Hersteller : IXYS |
MOSFETs 50 Amps 250V 50 Rds |
auf Bestellung 445 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP50N25T | Hersteller : Littelfuse |
Trans MOSFET N-CH 250V 50A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IXTP50N25T | Hersteller : Littelfuse |
Trans MOSFET N-CH 250V 50A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IXTP50N25T | Hersteller : Littelfuse |
Trans MOSFET N-CH 250V 50A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |