auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.4 EUR |
| 10+ | 7.96 EUR |
| 50+ | 7.43 EUR |
| 100+ | 6.28 EUR |
| 250+ | 5.91 EUR |
| 500+ | 5.3 EUR |
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Technische Details IXTP76N25T IXYS
Description: MOSFET N-CH 250V 76A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 76A (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V, Power Dissipation (Max): 460W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V.
Weitere Produktangebote IXTP76N25T nach Preis ab 9.82 EUR bis 10.93 EUR
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IXTP76N25T | Hersteller : IXYS |
 Description: MOSFET N-CH 250V 76A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V Power Dissipation (Max): 460W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V |
auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP76N25T | Hersteller : Littelfuse |
Trans MOSFET N-CH 250V 76A 3-Pin(3+Tab) TO-220 |
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IXTP76N25T | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO220AB; 148ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 76A Power dissipation: 460W Case: TO220AB On-state resistance: 44mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 148ns Anzahl je Verpackung: 1 Stücke |
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IXTP76N25T | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO220AB; 148ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 76A Power dissipation: 460W Case: TO220AB On-state resistance: 44mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 148ns |
Produkt ist nicht verfügbar |