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IXTP7N60P IXYS


99320-1110249.pdf Hersteller: IXYS
MOSFET 1.1 Ohms Rds
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Technische Details IXTP7N60P IXYS

Description: MOSFET N-CH 600V 7A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 100µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V.

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IXTP7N60P IXTP7N60P Hersteller : Littelfuse crete_mosfets_n-channel_standard_ixtp7n60p_datasheet.pdf.pdf Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220
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IXTP7N60P IXTP7N60P Hersteller : IXYS littelfuse-discrete-mosfets-ixtp7n60p-datasheet?assetguid=ab10706a-fa1a-44a3-b1a3-67d1fa0b11a4 Description: MOSFET N-CH 600V 7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 100µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
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Im Einkaufswagen  Stück im Wert von  UAH