Weitere Produktangebote IXTP80N10T nach Preis ab 2.34 EUR bis 7.15 EUR
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IXTP80N10T | Hersteller : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 230W Case: TO220AB On-state resistance: 14mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 100ns |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP80N10T | Hersteller : Ixys Corporation |
Trans MOSFET N-CH 100V 80A 3-Pin(3+Tab) TO-220 |
auf Bestellung 56 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP80N10T | Hersteller : IXYS |
MOSFETs 80 Amps 100V 13.0 Rds |
auf Bestellung 103 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP80N10T | Hersteller : IXYS |
Description: MOSFET N-CH 100V 80A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V |
auf Bestellung 16602 Stücke: Lieferzeit 10-14 Tag (e) |
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