Produkte > IXYS > IXTP80N12T2

IXTP80N12T2 IXYS

Name: IXTP80N12T2
Brand: IXYS
SKU: 78191464-3
Price: 726.00 EUR
Availability: InStock

littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_80n12t2_datasheet.pdf?assetguid=179b90c7-53dd-480f-a46b-1d7b2ae9347e

Hersteller: IXYS
Description: MOSFET N-CH 120V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 40A, 10V
Power Dissipation (Max): 325W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4740 pF @ 25 V

auf Bestellung 600 Stücke:

Lieferzeit 10-14 Tag (e)

Anzahl	Preis
300+	2.42 EUR

Mindestbestellmenge: 300

Im Einkaufswagen Stück im Wert von UAH

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Technische Details IXTP80N12T2 IXYS

Description: MOSFET N-CH 120V 80A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 40A, 10V, Power Dissipation (Max): 325W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 100µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4740 pF @ 25 V.

Weitere Produktangebote IXTP80N12T2

Foto	Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit	Preis
	IXTP80N12T2	Hersteller : IXYS	MOSFETs TO220 120V 80A N-CH TRENCH	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
	IXTP80N12T2	Hersteller : IXYS	Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO220AB; 90ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 80A Power dissipation: 325W Case: TO220AB On-state resistance: 17mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 90ns	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH