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IXTP8N65X2M

IXTP8N65X2M Littelfuse Inc.


littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6 Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 650V 4A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
auf Bestellung 1462 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.80 EUR
50+3.46 EUR
100+2.96 EUR
500+2.07 EUR
1000+2.00 EUR
Mindestbestellmenge: 4
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Technische Details IXTP8N65X2M Littelfuse Inc.

Description: MOSFET N-CH 650V 4A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V, Power Dissipation (Max): 32W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V.

Weitere Produktangebote IXTP8N65X2M nach Preis ab 2.82 EUR bis 5.19 EUR

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IXTP8N65X2M IXTP8N65X2M Hersteller : IXYS media-3322544.pdf MOSFETs TO220 650V 8A N-CH X2CLASS
auf Bestellung 107 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.19 EUR
10+4.93 EUR
50+3.70 EUR
100+3.19 EUR
250+3.12 EUR
500+2.97 EUR
1000+2.82 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTP8N65X2M IXTP8N65X2M Hersteller : Littelfuse sfets_n-channel_ultra_junction_ixtp8n65x2m_datasheet.pdf.pdf Trans MOSFET N-CH 650V 4A 3-Pin(3+Tab) OVERMOLDED TO-220
Produkt ist nicht verfügbar
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IXTP8N65X2M IXTP8N65X2M Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F13A7820&compId=IXTP8N65X2M.pdf?ci_sign=b4a625e99f92e8aa92ba736cfa192d6931540cee Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; 32W; TO220FP; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 32W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
Anzahl je Verpackung: 1 Stücke
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IXTP8N65X2M IXTP8N65X2M Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F13A7820&compId=IXTP8N65X2M.pdf?ci_sign=b4a625e99f92e8aa92ba736cfa192d6931540cee Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; 32W; TO220FP; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 32W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH