IXTP8N65X2M Littelfuse Inc.
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 650V 4A TO220
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
| Anzahl | Preis |
|---|---|
| 4+ | 4.79 EUR |
| 50+ | 3.23 EUR |
| 100+ | 2.77 EUR |
| 500+ | 1.99 EUR |
| 1000+ | 1.89 EUR |
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Technische Details IXTP8N65X2M Littelfuse Inc.
Description: MOSFET N-CH 650V 4A TO220, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 32W (Tc), Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V.
Weitere Produktangebote IXTP8N65X2M nach Preis ab 2.97 EUR bis 7.29 EUR
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IXTP8N65X2M | Hersteller : IXYS |
MOSFETs TO220 650V 8A N-CH X2CLASS |
auf Bestellung 87 Stücke: Lieferzeit 10-14 Tag (e) |
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