auf Bestellung 107 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.77 EUR |
| 10+ | 3.29 EUR |
| 100+ | 3.15 EUR |
| 500+ | 3.04 EUR |
| 1000+ | 2.97 EUR |
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Technische Details IXTP8N65X2M IXYS
Description: MOSFET N-CH 650V 4A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V, Power Dissipation (Max): 32W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V.
Weitere Produktangebote IXTP8N65X2M nach Preis ab 1.96 EUR bis 4.82 EUR
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IXTP8N65X2M | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 650V 4A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
auf Bestellung 1462 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP8N65X2M | Hersteller : Littelfuse |
Trans MOSFET N-CH 650V 4A 3-Pin(3+Tab) OVERMOLDED TO-220 |
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IXTP8N65X2M | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 8A; 32W; TO220FP; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 32W Case: TO220FP On-state resistance: 0.55Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns Features of semiconductor devices: ultra junction x-class Anzahl je Verpackung: 1 Stücke |
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IXTP8N65X2M | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 8A; 32W; TO220FP; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 32W Case: TO220FP On-state resistance: 0.55Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns Features of semiconductor devices: ultra junction x-class |
Produkt ist nicht verfügbar |