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IXTP8N70X2M

IXTP8N70X2M IXYS


pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F13BD820&compId=IXTP8N70X2M.pdf?ci_sign=f02a8f3645fd7c3555e8531950070371617f6959 Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 32W; TO220FP; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 32W
Features of semiconductor devices: ultra junction x-class
Gate charge: 12nC
Reverse recovery time: 200ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 299 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
24+3.07 EUR
27+2.73 EUR
30+2.4 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXTP8N70X2M IXYS

Description: MOSFET N-CH 700V 4A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V, Power Dissipation (Max): 32W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220 Isolated Tab, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V.

Weitere Produktangebote IXTP8N70X2M nach Preis ab 2.4 EUR bis 7.34 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXTP8N70X2M IXTP8N70X2M Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F13BD820&compId=IXTP8N70X2M.pdf?ci_sign=f02a8f3645fd7c3555e8531950070371617f6959 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 32W; TO220FP; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 32W
Features of semiconductor devices: ultra junction x-class
Gate charge: 12nC
Reverse recovery time: 200ns
auf Bestellung 299 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.07 EUR
27+2.73 EUR
30+2.4 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IXTP8N70X2M IXTP8N70X2M Hersteller : IXYS littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6 Description: MOSFET N-CH 700V 4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.34 EUR
50+3.76 EUR
100+3.42 EUR
500+2.81 EUR
1000+2.62 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXTP8N70X2M IXTP8N70X2M Hersteller : Littelfuse media.pdf Trans MOSFET N-CH 700V 8A 3-Pin(3+Tab) OVERMOLDED TO-220
Produkt ist nicht verfügbar
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IXTP8N70X2M IXTP8N70X2M Hersteller : IXYS media-3320665.pdf MOSFETs 700V/4A Ultra Junct X2-Class MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH