Weitere Produktangebote IXTP90N055T2 nach Preis ab 1.6 EUR bis 5.35 EUR
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IXTP90N055T2 | Hersteller : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO220AB; 37ns Case: TO220AB Type of transistor: N-MOSFET Features of semiconductor devices: thrench gate power mosfet Mounting: THT Kind of package: tube Polarisation: unipolar Drain-source voltage: 55V Drain current: 90A Reverse recovery time: 37ns Gate charge: 42nC On-state resistance: 8.4mΩ Power dissipation: 150W Kind of channel: enhancement |
auf Bestellung 290 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP90N055T2 | Hersteller : IXYS |
MOSFETs 90 Amps 55V 0.0084 Rds |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTP90N055T2 | Hersteller : Ixys Corporation |
Trans MOSFET N-CH 55V 90A 3-Pin(3+Tab) TO-220 |
auf Bestellung 292 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP90N055T2 | Hersteller : IXYS |
Description: MOSFET N-CH 55V 90A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 25 V |
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