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IXTQ10P50P

IXTQ10P50P IXYS


pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E986641C6D8BF&compId=IXT_10P50P.pdf?ci_sign=2f1b1156716ce14b61d2f374794ac80d0e99ca0e Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO3P
Case: TO3P
Mounting: THT
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Drain-source voltage: -500V
Drain current: -10A
Gate charge: 50nC
Reverse recovery time: 414ns
On-state resistance:
Power dissipation: 300W
Gate-source voltage: ±20V
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 120 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
8+9.45 EUR
12+6.01 EUR
13+5.68 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXTQ10P50P IXYS

Description: MOSFET P-CH 500V 10A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V.

Weitere Produktangebote IXTQ10P50P nach Preis ab 5.68 EUR bis 9.45 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXTQ10P50P IXTQ10P50P Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E986641C6D8BF&compId=IXT_10P50P.pdf?ci_sign=2f1b1156716ce14b61d2f374794ac80d0e99ca0e Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO3P
Case: TO3P
Mounting: THT
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Drain-source voltage: -500V
Drain current: -10A
Gate charge: 50nC
Reverse recovery time: 414ns
On-state resistance:
Power dissipation: 300W
Gate-source voltage: ±20V
Kind of package: tube
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.45 EUR
12+6.01 EUR
13+5.68 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ10P50P IXTQ10P50P Hersteller : Littelfuse fuse_discrete_mosfets_p-channel_ixt_10p50p_datasheet.pdf.pdf Trans MOSFET P-CH 500V 10A 3-Pin(3+Tab) TO-3P
Produkt ist nicht verfügbar
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IXTQ10P50P IXTQ10P50P Hersteller : Littelfuse media.pdf Trans MOSFET P-CH 500V 10A 3-Pin(3+Tab) TO-3P
Produkt ist nicht verfügbar
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IXTQ10P50P IXTQ10P50P Hersteller : Littelfuse Inc. littelfuse_discrete_mosfets_p-channel_ixt_10p50p_datasheet.pdf.pdf Description: MOSFET P-CH 500V 10A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Produkt ist nicht verfügbar
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IXTQ10P50P IXTQ10P50P Hersteller : IXYS media-3319144.pdf MOSFETs -10.0 Amps -500V 1.000 Rds
Produkt ist nicht verfügbar
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