
IXTQ10P50P IXYS

Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO3P
Case: TO3P
Mounting: THT
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PolarP™
Drain-source voltage: -500V
Drain current: -10A
Gate charge: 50nC
Reverse recovery time: 414ns
On-state resistance: 1Ω
Power dissipation: 300W
Gate-source voltage: ±20V
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 120 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
8+ | 9.45 EUR |
12+ | 6.01 EUR |
13+ | 5.68 EUR |
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Technische Details IXTQ10P50P IXYS
Description: MOSFET P-CH 500V 10A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V.
Weitere Produktangebote IXTQ10P50P nach Preis ab 5.68 EUR bis 9.45 EUR
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IXTQ10P50P | Hersteller : IXYS |
![]() Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO3P Case: TO3P Mounting: THT Polarisation: unipolar Kind of channel: enhancement Type of transistor: P-MOSFET Technology: PolarP™ Drain-source voltage: -500V Drain current: -10A Gate charge: 50nC Reverse recovery time: 414ns On-state resistance: 1Ω Power dissipation: 300W Gate-source voltage: ±20V Kind of package: tube |
auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTQ10P50P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXTQ10P50P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXTQ10P50P | Hersteller : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTQ10P50P | Hersteller : IXYS |
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Produkt ist nicht verfügbar |