
auf Bestellung 300 Stücke:
Lieferzeit 199-203 Tag (e)
Anzahl | Preis |
---|---|
1+ | 8.98 EUR |
10+ | 7.53 EUR |
30+ | 7.13 EUR |
120+ | 6.11 EUR |
270+ | 5.77 EUR |
510+ | 5.42 EUR |
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Technische Details IXTQ130N10T IXYS
Description: MOSFET N-CH 100V 130A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V, Power Dissipation (Max): 360W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-3P, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V.
Weitere Produktangebote IXTQ130N10T
Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTQ130N10T | Hersteller : Littelfuse |
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IXTQ130N10T | Hersteller : Littelfuse |
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IXTQ130N10T | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 100V 130A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V |
Produkt ist nicht verfügbar |