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IXTQ150N15P

IXTQ150N15P Littelfuse Inc.

littelfuse_discrete_mosfets_n-channel_standard_ixt_150n15p_datasheet.pdf.pdf
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 150V 150A TO3P
Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 714W (Tc)
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Technische Details IXTQ150N15P Littelfuse Inc.

Description: MOSFET N-CH 150V 150A TO3P, Rds On (Max) @ Id, Vgs: 13mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-3P, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 714W (Tc).

Weitere Produktangebote IXTQ150N15P

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
IXTQ150N15P IXTQ150N15P IXYS media-3322446.pdf MOSFETs 150 Amps 150V 0.013 Rds
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IXTQ150N15P IXTQ150N15P IXYS IXTK150N15P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P
Mounting: THT
Case: TO3P
Kind of package: tube
Power dissipation: 714W
Gate charge: 0.19µC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
 Mindestbestellmenge: 300 Stücke
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IXTQ150N15P media-3322446.pdf
IXTQ150N15P
Hersteller: IXYS
MOSFETs 150 Amps 150V 0.013 Rds
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ150N15P IXTK150N15P-DTE.pdf
IXTQ150N15P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P
Mounting: THT
Case: TO3P
Kind of package: tube
Power dissipation: 714W
Gate charge: 0.19µC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Reverse recovery time: 150ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen  Stück im Wert von  UAH