Technische Details IXTQ18N60P Littelfuse
Description: MOSFET N-CH 600V 18A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 420mOhm @ 9A, 10V, Power Dissipation (Max): 360W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V.
Weitere Produktangebote IXTQ18N60P
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IXTQ18N60P | Hersteller : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO3P; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 360W Case: TO3P On-state resistance: 0.42Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 49nC Features of semiconductor devices: standard power mosfet Reverse recovery time: 0.5µs Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTQ18N60P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 600V 18A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 9A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTQ18N60P | Hersteller : IXYS |
MOSFETs 18.0 Amps 600 V 0.42 Ohm Rds |
Produkt ist nicht verfügbar |
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IXTQ18N60P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO3P; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 360W Case: TO3P On-state resistance: 0.42Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 49nC Features of semiconductor devices: standard power mosfet Reverse recovery time: 0.5µs |
Produkt ist nicht verfügbar |