IXTQ200N10T
Produktcode: 103720
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ZCODE: 8541290010
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Weitere Produktangebote IXTQ200N10T nach Preis ab 7.8 EUR bis 71.5 EUR
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IXTQ200N10T | Hersteller : IXYS |
MOSFET 200 Amps 100V 5.4 Rds |
auf Bestellung 18 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTQ200N10T | Hersteller : IXYS |
Description: MOSFET N-CH 100V 200A TO3P Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-3P Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 550W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Drain to Source Voltage (Vdss): 100 V |
auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTQ200N10T | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns Case: TO3P Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 152nC Reverse recovery time: 76ns On-state resistance: 5.5mΩ Drain current: 200A Drain-source voltage: 100V Power dissipation: 550W Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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