IXTQ200N10T
Produktcode: 103720
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Hersteller:
ZCODE: 8541290010
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Weitere Produktangebote IXTQ200N10T nach Preis ab 9.28 EUR bis 85.08 EUR
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IXTQ200N10T | IXYS |
MOSFET 200 Amps 100V 5.4 Rds |
auf Bestellung 18 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTQ200N10T | IXYS |
Description: MOSFET N-CH 100V 200A TO3P Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-3P Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 550W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Drain to Source Voltage (Vdss): 100 V |
auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTQ200N10T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns Case: TO3P Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 152nC Reverse recovery time: 76ns On-state resistance: 5.5mΩ Drain current: 200A Drain-source voltage: 100V Power dissipation: 550W Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXTQ200N10T |
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Hersteller: IXYS
MOSFET 200 Amps 100V 5.4 Rds
MOSFET 200 Amps 100V 5.4 Rds
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 14.09 EUR |
| 10+ | 12.73 EUR |
| 30+ | 12.48 EUR |
| 120+ | 10.53 EUR |
| 270+ | 10.42 EUR |
| 510+ | 9.28 EUR |
| IXTQ200N10T |
|
Hersteller: IXYS
Description: MOSFET N-CH 100V 200A TO3P
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 550W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Description: MOSFET N-CH 100V 200A TO3P
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 550W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 15.05 EUR |
| 10+ | 13.61 EUR |
| IXTQ200N10T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns
Case: TO3P
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 152nC
Reverse recovery time: 76ns
On-state resistance: 5.5mΩ
Drain current: 200A
Drain-source voltage: 100V
Power dissipation: 550W
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns
Case: TO3P
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 152nC
Reverse recovery time: 76ns
On-state resistance: 5.5mΩ
Drain current: 200A
Drain-source voltage: 100V
Power dissipation: 550W
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 85.08 EUR |