auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 11.84 EUR |
| 10+ | 10.7 EUR |
| 30+ | 10.49 EUR |
| 120+ | 8.85 EUR |
| 270+ | 8.76 EUR |
| 510+ | 7.8 EUR |
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Technische Details IXTQ200N10T IXYS
Description: MOSFET N-CH 100V 200A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V, Power Dissipation (Max): 550W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V.
Weitere Produktangebote IXTQ200N10T nach Preis ab 8.94 EUR bis 12.65 EUR
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IXTQ200N10T | Hersteller : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 200A Power dissipation: 550W Case: TO3P On-state resistance: 5.5mΩ Mounting: THT Gate charge: 152nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 76ns Features of semiconductor devices: thrench gate power mosfet Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTQ200N10T | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 200A Power dissipation: 550W Case: TO3P On-state resistance: 5.5mΩ Mounting: THT Gate charge: 152nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 76ns Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTQ200N10T | Hersteller : IXYS |
Description: MOSFET N-CH 100V 200A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V Power Dissipation (Max): 550W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V |
auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTQ200N10T Produktcode: 103720
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| IXTQ200N10T | Hersteller : Littelfuse |
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