IXTQ22N50P IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
auf Bestellung 194 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 12+ | 6.28 EUR |
| 13+ | 5.65 EUR |
| 16+ | 4.5 EUR |
| 17+ | 4.25 EUR |
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Technische Details IXTQ22N50P IXYS
Description: MOSFET N-CH 500V 22A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V, Power Dissipation (Max): 350W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V.
Weitere Produktangebote IXTQ22N50P nach Preis ab 4.25 EUR bis 14.66 EUR
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IXTQ22N50P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Power dissipation: 350W Case: TO3P On-state resistance: 0.27Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 400ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 194 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTQ22N50P | Hersteller : IXYS |
Description: MOSFET N-CH 500V 22A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V Power Dissipation (Max): 350W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V |
auf Bestellung 282 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTQ22N50P | Hersteller : IXYS |
MOSFET 22.0 Amps 500 V 0.27 Ohm Rds |
auf Bestellung 300 Stücke: Lieferzeit 14-28 Tag (e) |
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IXTQ22N50P | Hersteller : IXYS SEMICONDUCTOR |
Description: IXYS SEMICONDUCTOR - IXTQ22N50P - Leistungs-MOSFET, n-Kanal, 500 V, 22 A, 0.27 ohm, TO-3P, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 500V rohsCompliant: YES Dauer-Drainstrom Id: 22A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5.5V euEccn: NLR Verlustleistung: 350W Anzahl der Pins: 3Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.27ohm |
auf Bestellung 379 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTQ22N50P Produktcode: 188888 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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IXTQ22N50P | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-3P |
Produkt ist nicht verfügbar |