auf Bestellung 142 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.71 EUR |
| 10+ | 7.88 EUR |
| 510+ | 7.48 EUR |
| 1020+ | 7.32 EUR |
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Technische Details IXTQ22N60P IXYS
Description: MOSFET N-CH 600V 22A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V, Power Dissipation (Max): 400W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V.
Weitere Produktangebote IXTQ22N60P nach Preis ab 7.39 EUR bis 12.67 EUR
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IXTQ22N60P | Hersteller : IXYS |
 Description: MOSFET N-CH 600V 22A TO3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V |
auf Bestellung 104 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTQ22N60P | Hersteller : Littelfuse |
Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-3P |
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IXTQ22N60P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 22A; 400W; TO3P Type of transistor: N-MOSFET Technology: PolarHV™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 400W Case: TO3P Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Gate charge: 62nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 0.5µs Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTQ22N60P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 22A; 400W; TO3P Type of transistor: N-MOSFET Technology: PolarHV™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 400W Case: TO3P Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Gate charge: 62nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 0.5µs |
Produkt ist nicht verfügbar |