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IXTQ26P20P

IXTQ26P20P IXYS


media-3319716.pdf Hersteller: IXYS
MOSFETs -26.0 Amps -200V 0.170 Rds
auf Bestellung 922 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+11.62 EUR
10+9.87 EUR
30+7.96 EUR
120+7.46 EUR
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Technische Details IXTQ26P20P IXYS

Description: MOSFET P-CH 200V 26A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V.

Weitere Produktangebote IXTQ26P20P nach Preis ab 6.13 EUR bis 12.87 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXTQ26P20P IXTQ26P20P Hersteller : Littelfuse Inc. IX%28T%2CH%2CP%2CQ%29A26P20P.pdf Description: MOSFET P-CH 200V 26A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
auf Bestellung 1680 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.87 EUR
30+8.17 EUR
120+6.89 EUR
510+6.13 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ26P20P IXTQ26P20P Hersteller : Littelfuse fuse_discrete_mosfets_p-channel_ixt_26p20p_datasheet.pdf.pdf Trans MOSFET P-CH 200V 26A 3-Pin(3+Tab) TO-3P
Produkt ist nicht verfügbar
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IXTQ26P20P IXTQ26P20P Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA00A2B034A38BF&compId=IXT_26P20P.pdf?ci_sign=27bd752ae6b58ce686eaff69bc47b3a02418da87 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO3P
Mounting: THT
Case: TO3P
Kind of package: tube
Gate charge: 56nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 240ns
Drain-source voltage: -200V
Drain current: -26A
On-state resistance: 0.17Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ26P20P IXTQ26P20P Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA00A2B034A38BF&compId=IXT_26P20P.pdf?ci_sign=27bd752ae6b58ce686eaff69bc47b3a02418da87 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO3P
Mounting: THT
Case: TO3P
Kind of package: tube
Gate charge: 56nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Reverse recovery time: 240ns
Drain-source voltage: -200V
Drain current: -26A
On-state resistance: 0.17Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH