IXTQ26P20P IXYS
Hersteller: IXYSCategory: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO3P
Mounting: THT
Case: TO3P
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -26A
Gate charge: 56nC
Reverse recovery time: 240ns
On-state resistance: 0.17Ω
Technology: PolarP™
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 297 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 8.31 EUR |
| 12+ | 6.35 EUR |
| 30+ | 5.43 EUR |
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Technische Details IXTQ26P20P IXYS
Description: MOSFET P-CH 200V 26A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-3P, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V.
Weitere Produktangebote IXTQ26P20P nach Preis ab 5.43 EUR bis 13.09 EUR
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IXTQ26P20P | Hersteller : IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO3P Mounting: THT Case: TO3P Kind of package: tube Polarisation: unipolar Drain-source voltage: -200V Drain current: -26A Gate charge: 56nC Reverse recovery time: 240ns On-state resistance: 0.17Ω Technology: PolarP™ Type of transistor: P-MOSFET Gate-source voltage: ±20V Power dissipation: 300W Kind of channel: enhancement |
auf Bestellung 297 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTQ26P20P | Hersteller : IXYS |
MOSFETs -26.0 Amps -200V 0.170 Rds |
auf Bestellung 582 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTQ26P20P | Hersteller : IXYS |
Description: MOSFET P-CH 200V 26A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V |
auf Bestellung 1488 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTQ26P20P | Hersteller : Littelfuse |
Trans MOSFET P-CH 200V 26A 3-Pin(3+Tab) TO-3P |
Produkt ist nicht verfügbar |