IXTQ26P20P IXYS
Hersteller: IXYS
Description: MOSFET P-CH 200V 26A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.37 EUR |
| 30+ | 10.83 EUR |
| 60+ | 9.92 EUR |
| 120+ | 9.17 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2 Stücke
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Produktbewertung abgeben
Technische Details IXTQ26P20P IXYS
Description: MOSFET P-CH 200V 26A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-3P, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V.
Weitere Produktangebote IXTQ26P20P nach Preis ab 8.95 EUR bis 18.46 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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IXTQ26P20P | IXYS |
MOSFETs -26.0 Amps -200V 0.170 Rds |
auf Bestellung 370 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTQ26P20P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO3P Mounting: THT Drain current: -26A Kind of channel: enhancement Drain-source voltage: -200V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO3P On-state resistance: 0.17Ω Reverse recovery time: 240ns Power dissipation: 300W Gate charge: 56nC Polarisation: unipolar Technology: PolarP™ |
auf Bestellung 292 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXTQ26P20P |
|
Hersteller: IXYS
MOSFETs -26.0 Amps -200V 0.170 Rds
MOSFETs -26.0 Amps -200V 0.170 Rds
auf Bestellung 370 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 18.46 EUR |
| 10+ | 9.97 EUR |
| 120+ | 9.2 EUR |
| 510+ | 8.95 EUR |
| IXTQ26P20P |
|
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO3P
Mounting: THT
Drain current: -26A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO3P
On-state resistance: 0.17Ω
Reverse recovery time: 240ns
Power dissipation: 300W
Gate charge: 56nC
Polarisation: unipolar
Technology: PolarP™
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -26A; 300W; TO3P
Mounting: THT
Drain current: -26A
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO3P
On-state resistance: 0.17Ω
Reverse recovery time: 240ns
Power dissipation: 300W
Gate charge: 56nC
Polarisation: unipolar
Technology: PolarP™
auf Bestellung 292 Stücke:
Lieferzeit 14-21 Tag (e)