auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 25.89 EUR |
| 10+ | 24.32 EUR |
| 30+ | 20.66 EUR |
| 60+ | 20.63 EUR |
| 120+ | 17.53 EUR |
| 270+ | 15.86 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXTQ30N50L2 IXYS
Description: MOSFET N-CH 500V 30A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V, Power Dissipation (Max): 400W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-3P, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 25 V.
Weitere Produktangebote IXTQ30N50L2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
IXTQ30N50L2 | Hersteller : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Power dissipation: 400W Case: TO3P On-state resistance: 0.215Ω Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 0.5µs Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
 |
IXTQ30N50L2 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 500V 30A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 25 V |
Produkt ist nicht verfügbar |
|
|
|
IXTQ30N50L2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Power dissipation: 400W Case: TO3P On-state resistance: 0.215Ω Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 0.5µs |
Produkt ist nicht verfügbar |