auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 25.33 EUR |
| 10+ | 22.32 EUR |
| 30+ | 21.72 EUR |
| 60+ | 20.49 EUR |
| 120+ | 19.29 EUR |
| 270+ | 18.55 EUR |
| 510+ | 17.69 EUR |
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Technische Details IXTQ30N50L2 IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns, Mounting: THT, Polarisation: unipolar, Kind of package: tube, Case: TO3P, Gate charge: 240nC, Kind of channel: enhanced, Reverse recovery time: 0.5µs, Drain-source voltage: 500V, Drain current: 30A, On-state resistance: 0.215Ω, Type of transistor: N-MOSFET, Power dissipation: 400W, Features of semiconductor devices: linear power mosfet, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXTQ30N50L2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IXTQ30N50L2 | Hersteller : IXYS |
 Description: MOSFET N-CH 500V 30A TO3P |
auf Bestellung 960 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTQ30N50L2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO3P Gate charge: 240nC Kind of channel: enhanced Reverse recovery time: 0.5µs Drain-source voltage: 500V Drain current: 30A On-state resistance: 0.215Ω Type of transistor: N-MOSFET Power dissipation: 400W Features of semiconductor devices: linear power mosfet Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTQ30N50L2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO3P Gate charge: 240nC Kind of channel: enhanced Reverse recovery time: 0.5µs Drain-source voltage: 500V Drain current: 30A On-state resistance: 0.215Ω Type of transistor: N-MOSFET Power dissipation: 400W Features of semiconductor devices: linear power mosfet |
Produkt ist nicht verfügbar |