auf Bestellung 221 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 28.88 EUR |
| 10+ | 24.53 EUR |
| 30+ | 19.4 EUR |
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Technische Details IXTQ40N50L2 IXYS
Description: MOSFET N-CH 500V 40A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V, Power Dissipation (Max): 540W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V.
Weitere Produktangebote IXTQ40N50L2 nach Preis ab 18.43 EUR bis 29.59 EUR
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IXTQ40N50L2 | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 500V 40A TO3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V Power Dissipation (Max): 540W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V |
auf Bestellung 390 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTQ40N50L2 | Hersteller : IXYS |
IXTQ40N50L2 THT N channel transistors |
Produkt ist nicht verfügbar |