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IXTQ40N50L2

IXTQ40N50L2 IXYS

littelfuse-discrete-mosfets-ixt-40n50-datasheet?assetguid=3c13a1c7-ab77-4d0f-811a-1876fcfa2bcc Hersteller: IXYS
Description: MOSFET N-CH 500V 40A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
auf Bestellung 95 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+29.53 EUR
30+18.52 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXTQ40N50L2 IXYS

Description: MOSFET N-CH 500V 40A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V, Power Dissipation (Max): 540W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-3P, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V.

Weitere Produktangebote IXTQ40N50L2 nach Preis ab 18.52 EUR bis 29.6 EUR

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IXTQ40N50L2 IXTQ40N50L2 Hersteller : IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Linear_IXT_40N50_Datasheet.PDF MOSFETs 40 Amps 500V
auf Bestellung 203 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+29.6 EUR
10+18.57 EUR
120+18.55 EUR
510+18.52 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTQ40N50L2 IXTQ40N50L2 Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBC36E59269820&compId=IXTH(T%2CQ)40N50L2.pdf?ci_sign=fb22fbad598fb6bca1335d953b47c9e27b2aa9b2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
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