IXTQ48N65X2M IXYS
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF
Mounting: THT
Power dissipation: 70W
Case: TO3PF
Kind of package: tube
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 70A
Drain-source voltage: 650V
Drain current: 48A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 76nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF
Mounting: THT
Power dissipation: 70W
Case: TO3PF
Kind of package: tube
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 70A
Drain-source voltage: 650V
Drain current: 48A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 76nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 14.13 EUR |
| 8+ | 9.45 EUR |
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Technische Details IXTQ48N65X2M IXYS
Description: DISCRETE MOSFET 48A 650V X2 TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V.
Weitere Produktangebote IXTQ48N65X2M nach Preis ab 9.45 EUR bis 26.36 EUR
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IXTQ48N65X2M | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF Mounting: THT Power dissipation: 70W Case: TO3PF Kind of package: tube Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 70A Drain-source voltage: 650V Drain current: 48A On-state resistance: 65mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 76nC |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTQ48N65X2M | Hersteller : IXYS |
 MOSFET MSFT 48A 650V X2 |
auf Bestellung 180 Stücke: Lieferzeit 14-28 Tag (e) |
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| IXTQ48N65X2M | Hersteller : IXYS |
Description: DISCRETE MOSFET 48A 650V X2 TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V |
auf Bestellung 660 Stücke: Lieferzeit 10-14 Tag (e) |
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