IXTQ50N20P IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 258 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 5.82 EUR |
| 16+ | 4.76 EUR |
| 30+ | 4.26 EUR |
| 120+ | 3.66 EUR |
| 270+ | 3.59 EUR |
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Technische Details IXTQ50N20P IXYS
Description: MOSFET N-CH 200V 50A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 50A, 10V, Power Dissipation (Max): 360W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3P, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V.
Weitere Produktangebote IXTQ50N20P nach Preis ab 3.66 EUR bis 9.57 EUR
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IXTQ50N20P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Power dissipation: 360W Case: TO3P Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Technology: PolarHT™ |
auf Bestellung 258 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTQ50N20P | Hersteller : IXYS |
MOSFETs 50 Amps 200V 0.06 Rds |
auf Bestellung 333 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTQ50N20P | Hersteller : IXYS |
Description: MOSFET N-CH 200V 50A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 50A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V |
auf Bestellung 1934 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTQ50N20P | Hersteller : IXYS SEMICONDUCTOR |
Description: IXYS SEMICONDUCTOR - IXTQ50N20P - Leistungs-MOSFET, n-Kanal, 200 V, 50 A, 0.06 ohm, TO-3P, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 200 Dauer-Drainstrom Id: 50 Qualifikation: - Verlustleistung Pd: 360 Gate-Source-Schwellenspannung, max.: 5 Verlustleistung: 360 Bauform - Transistor: TO-3P Anzahl der Pins: 3 Produktpalette: PolarHT Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.06 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.06 SVHC: No SVHC (16-Jan-2020) |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTQ50N20P | Hersteller : Littelfuse |
Trans MOSFET N-CH 200V 50A 3-Pin(3+Tab) TO-3P |
Produkt ist nicht verfügbar |