Weitere Produktangebote IXTQ50N25T nach Preis ab 5.22 EUR bis 14.48 EUR
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IXTQ50N25T | Hersteller : IXYS |
 Description: MOSFET N-CH 250V 50A TO3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V |
auf Bestellung 620 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTQ50N25T | Hersteller : IXYS |
MOSFETs 50Amps 250V |
auf Bestellung 263 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTQ50N25T |
MOSFET N-CH., 250V, 50A, TO-3P Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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IXTQ50N25T | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 50A; 400W; TO3P; 166ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 50A Power dissipation: 400W Case: TO3P On-state resistance: 50mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 166ns |
Produkt ist nicht verfügbar |