IXTQ52P10P IXYS
Hersteller: IXYSCategory: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO3P
Technology: PolarP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -52A
Gate charge: 60nC
Reverse recovery time: 120ns
On-state resistance: 50mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 300W
Case: TO3P
Kind of channel: enhancement
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 193 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 8.68 EUR |
| 12+ | 5.98 EUR |
| 13+ | 5.65 EUR |
| 120+ | 5.58 EUR |
| 270+ | 5.43 EUR |
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Technische Details IXTQ52P10P IXYS
Description: MOSFET P-CH 100V 52A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 52A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V.
Weitere Produktangebote IXTQ52P10P nach Preis ab 5.58 EUR bis 12.92 EUR
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IXTQ52P10P | Hersteller : IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO3P Technology: PolarP™ Mounting: THT Kind of package: tube Drain-source voltage: -100V Drain current: -52A Gate charge: 60nC Reverse recovery time: 120ns On-state resistance: 50mΩ Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 300W Case: TO3P Kind of channel: enhancement Type of transistor: P-MOSFET |
auf Bestellung 193 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTQ52P10P | Hersteller : IXYS |
MOSFETs -52.0 Amps -100V 0.050 Rds |
auf Bestellung 522 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTQ52P10P | Hersteller : Littelfuse Inc. |
Description: MOSFET P-CH 100V 52A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 52A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V |
auf Bestellung 1603 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTQ52P10P | Hersteller : LITTELFUSE |
Description: LITTELFUSE - IXTQ52P10P - MOSFET, P-CH, 100V, 52A, TO-3P tariffCode: 85412900 Transistormontage: Through Hole Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 52A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: TO-3P Anzahl der Pins: 3Pin(s) Produktpalette: PolarP Series productTraceability: No Kanaltyp: P Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.05ohm directShipCharge: 25 |
auf Bestellung 237 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTQ52P10P | Hersteller : Littelfuse |
Trans MOSFET P-CH 100V 52A 3-Pin(3+Tab) TO-3P |
Produkt ist nicht verfügbar |