IXTQ60N20T IXYS
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO3P; 118ns
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Gate charge: 73nC
Reverse recovery time: 118ns
On-state resistance: 40mΩ
Power dissipation: 500W
Case: TO3P
Kind of channel: enhancement
Mounting: THT
| Anzahl | Preis |
|---|---|
| 12+ | 6.38 EUR |
| 16+ | 4.76 EUR |
| 30+ | 4.22 EUR |
| 120+ | 3.55 EUR |
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Technische Details IXTQ60N20T IXYS
Description: MOSFET N-CH 200V 60A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V, Power Dissipation (Max): 500W (Ta), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3P, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V.
Weitere Produktangebote IXTQ60N20T nach Preis ab 3.98 EUR bis 9.45 EUR
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IXTQ60N20T | Hersteller : IXYS |
MOSFETs TO3P 200V 60A N-CH TRENCH |
auf Bestellung 274 Stücke: Lieferzeit 10-14 Tag (e) |
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