| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.59 EUR |
| 10+ | 6.94 EUR |
| 120+ | 6.37 EUR |
| 510+ | 5.65 EUR |
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Technische Details IXTQ60N20T IXYS
Description: MOSFET N-CH 200V 60A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V, Power Dissipation (Max): 500W (Ta), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3P, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V.
Weitere Produktangebote IXTQ60N20T
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXTQ60N20T | IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO3P; 118ns Features of semiconductor devices: thrench gate power mosfet Drain current: 60A Kind of channel: enhancement Drain-source voltage: 200V Type of transistor: N-MOSFET Kind of package: tube Case: TO3P On-state resistance: 40mΩ Reverse recovery time: 118ns Mounting: THT Power dissipation: 500W Gate charge: 73nC Polarisation: unipolar |
auf Bestellung 211 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXTQ60N20T |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO3P; 118ns
Features of semiconductor devices: thrench gate power mosfet
Drain current: 60A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO3P
On-state resistance: 40mΩ
Reverse recovery time: 118ns
Mounting: THT
Power dissipation: 500W
Gate charge: 73nC
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO3P; 118ns
Features of semiconductor devices: thrench gate power mosfet
Drain current: 60A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO3P
On-state resistance: 40mΩ
Reverse recovery time: 118ns
Mounting: THT
Power dissipation: 500W
Gate charge: 73nC
Polarisation: unipolar
auf Bestellung 211 Stücke:
Lieferzeit 14-21 Tag (e)