IXTQ60N20T IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO3P; 118ns
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 73nC
Kind of channel: enhancement
Mounting: THT
Case: TO3P
Reverse recovery time: 118ns
Drain-source voltage: 200V
Drain current: 60A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 241 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 7.51 EUR |
| 19+ | 3.79 EUR |
| 20+ | 3.58 EUR |
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Technische Details IXTQ60N20T IXYS
Description: MOSFET N-CH 200V 60A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V, Power Dissipation (Max): 500W (Ta), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3P, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V.
Weitere Produktangebote IXTQ60N20T nach Preis ab 3.58 EUR bis 8.34 EUR
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IXTQ60N20T | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO3P; 118ns On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 500W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 73nC Kind of channel: enhancement Mounting: THT Case: TO3P Reverse recovery time: 118ns Drain-source voltage: 200V Drain current: 60A |
auf Bestellung 241 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTQ60N20T | Hersteller : IXYS |
MOSFETs TO3P 200V 60A N-CH TRENCH |
auf Bestellung 276 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTQ60N20T | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 200V 60A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V Power Dissipation (Max): 500W (Ta) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V |
auf Bestellung 1470 Stücke: Lieferzeit 10-14 Tag (e) |
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