Technische Details IXTQ96N15P IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 96A; 480W; TO3P, Type of transistor: N-MOSFET, Technology: PolarHT™, Polarisation: unipolar, Drain-source voltage: 150V, Drain current: 96A, Power dissipation: 480W, Case: TO3P, Gate-source voltage: ±20V, On-state resistance: 24mΩ, Mounting: THT, Gate charge: 110nC, Kind of package: tube, Kind of channel: enhancement, Reverse recovery time: 150ns, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXTQ96N15P
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IXTQ96N15P | Hersteller : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 96A; 480W; TO3P Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 96A Power dissipation: 480W Case: TO3P Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTQ96N15P | Hersteller : IXYS |
MOSFET 96 Amps 150V 0.024 Rds |
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IXTQ96N15P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 96A; 480W; TO3P Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 150V Drain current: 96A Power dissipation: 480W Case: TO3P Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns |
Produkt ist nicht verfügbar |