auf Bestellung 300 Stücke:
Lieferzeit 234-238 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 32.3 EUR |
| 10+ | 28.69 EUR |
| 30+ | 28.27 EUR |
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Technische Details IXTR102N65X2 IXYS
Description: MOSFET N-CH 650V 54A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 54A (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 51A, 10V, Power Dissipation (Max): 330W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: ISOPLUS247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 25 V.
Weitere Produktangebote IXTR102N65X2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt |
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IXTR102N65X2 | Hersteller : Littelfuse |
 Trans MOSFET N-CH 650V 54A 3-Pin(3+Tab) ISOPLUS 247 |
Produkt ist nicht verfügbar |
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IXTR102N65X2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 54A; 330W; ISOPLUS247™; 450ns Case: ISOPLUS247™ Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Power dissipation: 330W Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Gate charge: 152nC Kind of channel: enhanced Reverse recovery time: 450ns Drain-source voltage: 650V Drain current: 54A On-state resistance: 33mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTR102N65X2 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 650V 54A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 51A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: ISOPLUS247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTR102N65X2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 54A; 330W; ISOPLUS247™; 450ns Case: ISOPLUS247™ Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Power dissipation: 330W Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Gate charge: 152nC Kind of channel: enhanced Reverse recovery time: 450ns Drain-source voltage: 650V Drain current: 54A On-state resistance: 33mΩ |
Produkt ist nicht verfügbar |