IXTR140P10T IXYS
Hersteller: IXYSCategory: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -110A; 270W; 130ns
Mounting: THT
Case: ISOPLUS247™
Reverse recovery time: 130ns
Drain-source voltage: -100V
Drain current: -110A
On-state resistance: 11mΩ
Type of transistor: P-MOSFET
Power dissipation: 270W
Polarisation: unipolar
Kind of package: tube
Gate charge: 400nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
Anzahl je Verpackung: 1 Stücke
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Technische Details IXTR140P10T IXYS
Category: THT P channel transistors, Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -110A; 270W; 130ns, Mounting: THT, Case: ISOPLUS247™, Reverse recovery time: 130ns, Drain-source voltage: -100V, Drain current: -110A, On-state resistance: 11mΩ, Type of transistor: P-MOSFET, Power dissipation: 270W, Polarisation: unipolar, Kind of package: tube, Gate charge: 400nC, Technology: TrenchP™, Kind of channel: enhancement, Gate-source voltage: ±15V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXTR140P10T
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IXTR140P10T | Hersteller : IXYS |
Description: MOSFET P-CH 100V 110A ISOPLUS247 |
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IXTR140P10T | Hersteller : IXYS |
MOSFETs TrenchP Channel Power MOSFETs |
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IXTR140P10T | Hersteller : IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -110A; 270W; 130ns Mounting: THT Case: ISOPLUS247™ Reverse recovery time: 130ns Drain-source voltage: -100V Drain current: -110A On-state resistance: 11mΩ Type of transistor: P-MOSFET Power dissipation: 270W Polarisation: unipolar Kind of package: tube Gate charge: 400nC Technology: TrenchP™ Kind of channel: enhancement Gate-source voltage: ±15V |
Produkt ist nicht verfügbar |