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IXTR210P10T

IXTR210P10T IXYS


pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA04275137A38BF&compId=IXTR210P10T.pdf?ci_sign=6be69c09b119a4bc5566676e52a110aa09280e61 Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Reverse recovery time: 200ns
Drain-source voltage: -100V
Drain current: -195A
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Gate charge: 740nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
3+32.49 EUR
30+31.39 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXTR210P10T IXYS

Description: MOSFET P-CH 100V 195A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 195A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 105A, 10V, Power Dissipation (Max): 595W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: ISOPLUS247™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 69500 pF @ 25 V.

Weitere Produktangebote IXTR210P10T nach Preis ab 31.39 EUR bis 39.24 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXTR210P10T IXTR210P10T Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA04275137A38BF&compId=IXTR210P10T.pdf?ci_sign=6be69c09b119a4bc5566676e52a110aa09280e61 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Reverse recovery time: 200ns
Drain-source voltage: -100V
Drain current: -195A
On-state resistance: 8mΩ
Type of transistor: P-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Gate charge: 740nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+32.49 EUR
30+31.39 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXTR210P10T IXTR210P10T Hersteller : IXYS littelfuse_discrete_mosfets_p-channel_ixtr210p10t_datasheet.pdf.pdf Description: MOSFET P-CH 100V 195A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 105A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 69500 pF @ 25 V
auf Bestellung 540 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
300+39.24 EUR
Mindestbestellmenge: 300
Im Einkaufswagen  Stück im Wert von  UAH
IXTR210P10T IXTR210P10T Hersteller : IXYS media-3321949.pdf MOSFET TrenchP Channel Power MOSFETs
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