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IXTR210P10T IXYS
Hersteller: IXYSDescription: MOSFET P-CH 100V 195A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 105A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 69500 pF @ 25 V
auf Bestellung 540 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 300+ | 39.24 EUR |
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Technische Details IXTR210P10T IXYS
Description: MOSFET P-CH 100V 195A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 195A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 105A, 10V, Power Dissipation (Max): 595W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: ISOPLUS247™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 740 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 69500 pF @ 25 V.
Weitere Produktangebote IXTR210P10T nach Preis ab 31.49 EUR bis 39.27 EUR
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IXTR210P10T | Hersteller : IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns Case: ISOPLUS247™ Mounting: THT Kind of package: tube Polarisation: unipolar Drain current: -195A Drain-source voltage: -100V Gate charge: 740nC Reverse recovery time: 200ns On-state resistance: 8mΩ Gate-source voltage: ±15V Power dissipation: 390W Kind of channel: enhancement Technology: TrenchP™ Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTR210P10T | Hersteller : IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns Case: ISOPLUS247™ Mounting: THT Kind of package: tube Polarisation: unipolar Drain current: -195A Drain-source voltage: -100V Gate charge: 740nC Reverse recovery time: 200ns On-state resistance: 8mΩ Gate-source voltage: ±15V Power dissipation: 390W Kind of channel: enhancement Technology: TrenchP™ Type of transistor: P-MOSFET |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTR210P10T | Hersteller : IXYS |
MOSFET TrenchP Channel Power MOSFETs |
Produkt ist nicht verfügbar |