IXTR36P15P IXYS
Hersteller: IXYSCategory: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -22A; 150W; 150ns
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -22A
Power dissipation: 150W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 55nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 52 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 7.14 EUR |
| 12+ | 6.31 EUR |
| 13+ | 5.53 EUR |
| 14+ | 5.23 EUR |
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Technische Details IXTR36P15P IXYS
Description: MOSFET P-CH 150V 22A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 18A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: ISOPLUS247™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V.
Weitere Produktangebote IXTR36P15P nach Preis ab 5.23 EUR bis 7.14 EUR
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IXTR36P15P | Hersteller : IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -22A; 150W; 150ns Type of transistor: P-MOSFET Technology: PolarP™ Polarisation: unipolar Drain-source voltage: -150V Drain current: -22A Power dissipation: 150W Case: ISOPLUS247™ Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: THT Gate charge: 55nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns |
auf Bestellung 52 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTR36P15P | Hersteller : Littelfuse Inc. |
Description: MOSFET P-CH 150V 22A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 18A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: ISOPLUS247™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTR36P15P | Hersteller : IXYS |
MOSFETs -22.0 Amps -150V 0.120 Rds |
Produkt ist nicht verfügbar |