Technische Details IXTR90P10P IXYS
Category: THT P channel transistors, Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -57A; 190W; 144ns, Technology: PolarP™, Mounting: THT, Kind of package: tube, Drain-source voltage: -100V, Drain current: -57A, Gate charge: 0.12µC, Reverse recovery time: 144ns, On-state resistance: 27mΩ, Polarisation: unipolar, Gate-source voltage: ±20V, Power dissipation: 190W, Case: ISOPLUS247™, Kind of channel: enhancement, Type of transistor: P-MOSFET.
Weitere Produktangebote IXTR90P10P
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
IXTR90P10P | Hersteller : IXYS |
 MOSFET -57.0 Amps -100V 0.270 Rds |
Produkt ist nicht verfügbar |
|
 |
IXTR90P10P | Hersteller : IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -57A; 190W; 144ns Technology: PolarP™ Mounting: THT Kind of package: tube Drain-source voltage: -100V Drain current: -57A Gate charge: 0.12µC Reverse recovery time: 144ns On-state resistance: 27mΩ Polarisation: unipolar Gate-source voltage: ±20V Power dissipation: 190W Case: ISOPLUS247™ Kind of channel: enhancement Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |