IXTR90P20P IXYS
Hersteller: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -53A; 312W; 315ns
Case: ISOPLUS247™
Type of transistor: P-MOSFET
Technology: PolarP™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -53A
Reverse recovery time: 315ns
Gate charge: 205nC
On-state resistance: 48mΩ
Gate-source voltage: ±20V
Power dissipation: 312W
Kind of channel: enhancement
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Technische Details IXTR90P20P IXYS
Category: THT P channel transistors, Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -53A; 312W; 315ns, Case: ISOPLUS247™, Type of transistor: P-MOSFET, Technology: PolarP™, Mounting: THT, Kind of package: tube, Polarisation: unipolar, Drain-source voltage: -200V, Drain current: -53A, Reverse recovery time: 315ns, Gate charge: 205nC, On-state resistance: 48mΩ, Gate-source voltage: ±20V, Power dissipation: 312W, Kind of channel: enhancement.
Weitere Produktangebote IXTR90P20P
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IXTR90P20P | Hersteller : IXYS |
Description: MOSFET P-CH 200V 53A ISOPLUS247 |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTR90P20P | Hersteller : IXYS |
MOSFETs -90.0 Amps -200V 0.048 Rds |
Produkt ist nicht verfügbar |