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| Anzahl | Preis |
|---|---|
| 1+ | 21.33 EUR |
| 10+ | 20.05 EUR |
| 30+ | 17.02 EUR |
| 60+ | 16.98 EUR |
| 120+ | 16.24 EUR |
| 270+ | 15.08 EUR |
| 510+ | 14.04 EUR |
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Technische Details IXTT100N25P IXYS
Description: MOSFET N-CH 250V 100A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V.
Weitere Produktangebote IXTT100N25P
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IXTT100N25P | Hersteller : Littelfuse |
 Trans MOSFET N-CH 250V 100A 3-Pin(2+Tab) TO-268 |
Produkt ist nicht verfügbar |
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IXTT100N25P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 250V 100A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 50A, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-268AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V |
Produkt ist nicht verfügbar |