IXTT10N100D IXYS

Description: MOSFET N-CH 1000V 10A TO268, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-268AA, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 400W (Tc), FET Feature: Depletion Mode, Rds On (Max) @ Id, Vgs: 1.4Ohm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube.