Technische Details IXTT10N100D Littelfuse
Description: MOSFET N-CH 1000V 10A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 10A, 10V, FET Feature: Depletion Mode, Power Dissipation (Max): 400W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-268AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V.
Weitere Produktangebote IXTT10N100D
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IXTT10N100D | Hersteller : IXYS |
 IXTT10N100D SMD N channel transistors |
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IXTT10N100D | Hersteller : IXYS |
Description: MOSFET N-CH 1000V 10A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 10A, 10V FET Feature: Depletion Mode Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-268AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTT10N100D | Hersteller : IXYS |
MOSFETs 10 Amps 1000V 1.4 Rds |
Produkt ist nicht verfügbar |