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Technische Details IXTT10N100D2-TRL Littelfuse
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; 1kV; 10A; 695W; D3PAK,TO268; 1.2us, Type of transistor: N-MOSFET, Drain-source voltage: 1kV, Drain current: 10A, Power dissipation: 695W, Case: D3PAK; TO268, Gate-source voltage: 20V, On-state resistance: 1.5Ω, Mounting: SMD, Gate charge: 200nC, Reverse recovery time: 1.2µs.
Weitere Produktangebote IXTT10N100D2-TRL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| IXTT10N100D2-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 1kV; 10A; 695W; D3PAK,TO268; 1.2us Type of transistor: N-MOSFET Drain-source voltage: 1kV Drain current: 10A Power dissipation: 695W Case: D3PAK; TO268 Gate-source voltage: 20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 200nC Reverse recovery time: 1.2µs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 400 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXTT10N100D2-TRL |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 10A; 695W; D3PAK,TO268; 1.2us
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: D3PAK; TO268
Gate-source voltage: 20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 200nC
Reverse recovery time: 1.2µs
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 10A; 695W; D3PAK,TO268; 1.2us
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: D3PAK; TO268
Gate-source voltage: 20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 200nC
Reverse recovery time: 1.2µs
Produkt ist nicht verfügbar
Mindestbestellmenge: 400 Stücke
Im Einkaufswagen
Stück im Wert von UAH