auf Bestellung 396 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 33.07 EUR |
| 10+ | 30.82 EUR |
| 30+ | 26.17 EUR |
| 60+ | 26.12 EUR |
| 120+ | 24.43 EUR |
| 270+ | 23.2 EUR |
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Technische Details IXTT10N100D2 IXYS
Description: MOSFET N-CH 1000V 10A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 5A, 10V, FET Feature: Depletion Mode, Power Dissipation (Max): 695W (Tc), Supplier Device Package: TO-268AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 25 V.
Weitere Produktangebote IXTT10N100D2
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Preis |
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IXTT10N100D2 | Hersteller : Littelfuse |
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| IXTT10N100D2 | Hersteller : IXYS |
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IXTT10N100D2 | Hersteller : IXYS |
Description: MOSFET N-CH 1000V 10A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 5A, 10V FET Feature: Depletion Mode Power Dissipation (Max): 695W (Tc) Supplier Device Package: TO-268AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 25 V |
Produkt ist nicht verfügbar |