IXTT170N10P IXYS
Hersteller: IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO268
Case: TO268
Reverse recovery time: 120ns
Drain-source voltage: 100V
Drain current: 170A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 715W
Polarisation: unipolar
Kind of package: tube
Gate charge: 198nC
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 15.34 EUR |
| 7+ | 10.44 EUR |
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Technische Details IXTT170N10P IXYS
Description: MOSFET N-CH 100V 170A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V, Power Dissipation (Max): 715W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V.
Weitere Produktangebote IXTT170N10P nach Preis ab 10.44 EUR bis 23.09 EUR
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IXTT170N10P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO268 Case: TO268 Reverse recovery time: 120ns Drain-source voltage: 100V Drain current: 170A On-state resistance: 9mΩ Type of transistor: N-MOSFET Power dissipation: 715W Polarisation: unipolar Kind of package: tube Gate charge: 198nC Technology: Polar™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 290 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTT170N10P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 100V 170A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V Power Dissipation (Max): 715W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-268AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V |
auf Bestellung 281 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTT170N10P | Hersteller : Littelfuse |
Trans MOSFET N-CH 100V 170A 3-Pin(2+Tab) TO-268 |
Produkt ist nicht verfügbar |
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IXTT170N10P | Hersteller : Littelfuse |
Trans MOSFET N-CH 100V 170A 3-Pin(2+Tab) TO-268 |
Produkt ist nicht verfügbar |
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| IXTT170N10P | Hersteller : Littelfuse |
Trans MOSFET N-CH 100V 170A 3-Pin(2+Tab) TO-268 |
Produkt ist nicht verfügbar |
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IXTT170N10P | Hersteller : IXYS |
MOSFETs 170 Amps 100V 0.009 Ohm Rds |
Produkt ist nicht verfügbar |