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IXTT170N10P

IXTT170N10P Littelfuse Inc.

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Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 100V 170A TO268
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 715W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
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30+14.04 EUR
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Technische Details IXTT170N10P Littelfuse Inc.

Description: MOSFET N-CH 100V 170A TO268, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-268AA, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 715W (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V.

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IXTT170N10P IXTT170N10P Hersteller : IXYS media-3319689.pdf MOSFETs 170 Amps 100V 0.009 Ohm Rds
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