 
IXTT170N10P IXYS
 Hersteller: IXYS
                                                Hersteller: IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO268
Kind of channel: enhancement
Case: TO268
Type of transistor: N-MOSFET
Mounting: SMD
Technology: Polar™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Gate charge: 198nC
Reverse recovery time: 120ns
On-state resistance: 9mΩ
Power dissipation: 715W
Gate-source voltage: ±20V
auf Bestellung 147 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis | 
|---|---|
| 5+ | 14.41 EUR | 
| 6+ | 12.36 EUR | 
| 10+ | 11.03 EUR | 
| 30+ | 10.04 EUR | 
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Technische Details IXTT170N10P IXYS
Description: MOSFET N-CH 100V 170A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V, Power Dissipation (Max): 715W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V. 
Weitere Produktangebote IXTT170N10P nach Preis ab 10.04 EUR bis 23.09 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|   | IXTT170N10P | Hersteller : IXYS |  Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO268 Kind of channel: enhancement Case: TO268 Type of transistor: N-MOSFET Mounting: SMD Technology: Polar™ Kind of package: tube Polarisation: unipolar Drain-source voltage: 100V Drain current: 170A Gate charge: 198nC Reverse recovery time: 120ns On-state resistance: 9mΩ Power dissipation: 715W Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke | auf Bestellung 147 Stücke:Lieferzeit 7-14 Tag (e) | 
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|   | IXTT170N10P | Hersteller : Littelfuse Inc. |  Description: MOSFET N-CH 100V 170A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V Power Dissipation (Max): 715W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-268AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V | auf Bestellung 281 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | IXTT170N10P | Hersteller : Littelfuse |  Trans MOSFET N-CH 100V 170A 3-Pin(2+Tab) TO-268 | Produkt ist nicht verfügbar | |||||||||||
|   | IXTT170N10P | Hersteller : Littelfuse |  Trans MOSFET N-CH 100V 170A 3-Pin(2+Tab) TO-268 | Produkt ist nicht verfügbar | |||||||||||
| IXTT170N10P | Hersteller : Littelfuse |  Trans MOSFET N-CH 100V 170A 3-Pin(2+Tab) TO-268 | Produkt ist nicht verfügbar | ||||||||||||
|   | IXTT170N10P | Hersteller : IXYS |  MOSFETs 170 Amps 100V 0.009 Ohm Rds | Produkt ist nicht verfügbar |