IXTT170N10P Littelfuse Inc.
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 100V 170A TO268
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 715W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
| Anzahl | Privatkunde |
|---|---|
| 1+ | 27.48 EUR |
| 30+ | 16.71 EUR |
| 120+ | 14.35 EUR |
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10-14 Tag (e)
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Technische Details IXTT170N10P Littelfuse Inc.
Description: MOSFET N-CH 100V 170A TO268, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-268AA, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 715W (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V.
Weitere Produktangebote IXTT170N10P
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IXTT170N10P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO268 Power dissipation: 715W Gate charge: 198nC Polarisation: unipolar Technology: Polar™ Drain current: 170A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO268 On-state resistance: 9mΩ Reverse recovery time: 120ns Mounting: SMD |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXTT170N10P |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO268
Power dissipation: 715W
Gate charge: 198nC
Polarisation: unipolar
Technology: Polar™
Drain current: 170A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 9mΩ
Reverse recovery time: 120ns
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO268
Power dissipation: 715W
Gate charge: 198nC
Polarisation: unipolar
Technology: Polar™
Drain current: 170A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 9mΩ
Reverse recovery time: 120ns
Mounting: SMD
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)