IXTT1N300P3HV Littelfuse Inc.
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 3000V 1A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 50Ohm @ 500mA, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268HV (IXTT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 3000 V
Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 895 pF @ 25 V
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Technische Details IXTT1N300P3HV Littelfuse Inc.
Description: MOSFET N-CH 3000V 1A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 50Ohm @ 500mA, 10V, Power Dissipation (Max): 195W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-268HV (IXTT), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 3000 V, Gate Charge (Qg) (Max) @ Vgs: 30.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 895 pF @ 25 V.
Weitere Produktangebote IXTT1N300P3HV nach Preis ab 64.82 EUR bis 86.1 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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IXTT1N300P3HV | IXYS |
MOSFETs TO268 3KV 1A N-CH POLAR |
auf Bestellung 79 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTT1N300P3HV |
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Hersteller: IXYS
MOSFETs TO268 3KV 1A N-CH POLAR
MOSFETs TO268 3KV 1A N-CH POLAR
auf Bestellung 79 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 86.1 EUR |
| 10+ | 69.51 EUR |
| 120+ | 64.82 EUR |