Technische Details IXTT1N450HV Littelfuse
Description: MOSFET N-CH 4500V 1A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 85Ohm @ 50mA, 10V, Power Dissipation (Max): 520W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 250µA, Supplier Device Package: TO-268AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 4500 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V.
Weitere Produktangebote IXTT1N450HV
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IXTT1N450HV | Hersteller : Littelfuse |
 Trans MOSFET N-CH 4.5KV 1A 3-Pin(2+Tab) TO-268 |
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IXTT1N450HV | Hersteller : Littelfuse |
Trans MOSFET N-CH 4.5KV 1A 3-Pin(2+Tab) TO-268 |
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IXTT1N450HV | Hersteller : IXYS |
Description: MOSFET N-CH 4500V 1A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 85Ohm @ 50mA, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 250µA Supplier Device Package: TO-268AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 4500 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V |
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IXTT1N450HV | Hersteller : IXYS |
MOSFETs 4500V 1A HV Power MOSFET |
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IXTT1N450HV | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO268HV; 1.75us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 4.5kV Drain current: 1A Power dissipation: 520W Case: TO268HV On-state resistance: 80Ω Mounting: SMD Gate charge: 46nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.75µs |
Produkt ist nicht verfügbar |