
IXTT1N450HV Littelfuse Inc.

Description: MOSFET N-CH 4500V 1A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 85Ohm @ 50mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 4500 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V
auf Bestellung 1245 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 82.07 EUR |
30+ | 58.14 EUR |
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Technische Details IXTT1N450HV Littelfuse Inc.
Description: MOSFET N-CH 4500V 1A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 85Ohm @ 50mA, 10V, Power Dissipation (Max): 520W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 250µA, Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 4500 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V.
Weitere Produktangebote IXTT1N450HV
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IXTT1N450HV | Hersteller : Littelfuse |
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IXTT1N450HV | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXTT1N450HV | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXTT1N450HV | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO268HV; 1.75us Case: TO268HV Mounting: SMD Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 46nC Reverse recovery time: 1.75µs Drain current: 1A On-state resistance: 80Ω Power dissipation: 520W Drain-source voltage: 4.5kV Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTT1N450HV | Hersteller : IXYS |
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Produkt ist nicht verfügbar |
|
![]() |
IXTT1N450HV | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO268HV; 1.75us Case: TO268HV Mounting: SMD Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 46nC Reverse recovery time: 1.75µs Drain current: 1A On-state resistance: 80Ω Power dissipation: 520W Drain-source voltage: 4.5kV Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |