IXTT24P20 IXYS
Hersteller: IXYSCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -24A; 300W; TO268; 250ns
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: tube
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -24A
Gate charge: 150nC
Reverse recovery time: 250ns
On-state resistance: 0.15Ω
Power dissipation: 300W
Gate-source voltage: ±20V
Case: TO268
Anzahl je Verpackung: 1 Stücke
auf Bestellung 183 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 13.99 EUR |
| 7+ | 10.64 EUR |
| 8+ | 10.05 EUR |
| 30+ | 9.67 EUR |
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Technische Details IXTT24P20 IXYS
Description: MOSFET P-CH 200V 24A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 500mA, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V.
Weitere Produktangebote IXTT24P20 nach Preis ab 9.67 EUR bis 19.61 EUR
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IXTT24P20 | Hersteller : IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -24A; 300W; TO268; 250ns Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: tube Mounting: SMD Polarisation: unipolar Drain-source voltage: -200V Drain current: -24A Gate charge: 150nC Reverse recovery time: 250ns On-state resistance: 0.15Ω Power dissipation: 300W Gate-source voltage: ±20V Case: TO268 |
auf Bestellung 183 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTT24P20 | Hersteller : IXYS |
MOSFET 24 Amps 200V 11 Rds |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTT24P20 | Hersteller : IXYS |
Description: MOSFET P-CH 200V 24A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 500mA, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-268AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V |
auf Bestellung 132 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTT24P20 | Hersteller : Littelfuse |
Trans MOSFET P-CH Si 200V 24A 3-Pin(2+Tab) TO-268 |
Produkt ist nicht verfügbar |
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IXTT24P20 | Hersteller : Littelfuse |
Trans MOSFET P-CH Si 200V 24A 3-Pin(2+Tab) TO-268 |
Produkt ist nicht verfügbar |